Effect of thickness and heat treatment on the crystallite size and dislocation density of nanostructured zinc oxide thin films

被引：12

作者：

Aghdaee, S. R. ^{[1
]}

Soleimanian, V. ^{[1
]}

机构：

[1] Iran Univ Sci & Technol, Sch Phys, Tehran, Iran

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 20期

关键词：

X-ray diffraction; Defects; Sol-gel method; Zinc oxide; Semiconducting materials; DIFFRACTION LINE-PROFILES; BROADENING ANALYSIS; OPTICAL-PROPERTIES; MICROSTRUCTURE; DISTRIBUTIONS; TEMPERATURE; STRAIN;

D O I：

10.1016/j.jcrysgro.2010.07.024

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The zinc oxide thin films were deposited by the sol-gel method on the glass microscope slide substrates. The microstructure of films was determined as a function of film thickness as well as annealing temperature using X-ray line broadening technique and applying whole powder pattern modeling (WPPM). This investigation showed that the film thickness has no significant effect on the grain size, whereas the dislocation density decreases with the film thickness. On the other hand with the rise of annealing temperature the dislocation density decreases, but the crystallite size becomes larger. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3050 / 3056

页数：7

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