Dependence of DAP emission properties on impurity concentrations in N-/B-co-doped 6H-SiC

被引：5

作者：

Murata, Satoshi ^{[1
]}

Nakamura, Yoshihiro ^{[1
]}

Maeda, Tomohiko ^{[1
]}

Shibata, Yoko ^{[1
]}

Ikuta, Mina ^{[1
]}

Sugiura, Masaaki ^{[1
]}

Nitta, Shugo ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Amano, Hiroshi ^{[1
]}

Akasaki, Isamu ^{[1
]}

Yoshimoto, Masahiro ^{[2
]}

Furusho, Tomoaki ^{[3
]}

Kinoshita, Hiroyuki ^{[3
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan

[2] Kyoto Inst Technol, Cooperat Res Ctr, Sakyo Ku, Kyoto 6068585, Japan

[3] SiXON Ltd, Ukyo Ku, Kyoto 6158686, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷

关键词：

DAP; optical property; light-emitting diode; photoluminescence; doping concentration;

D O I：

10.4028/www.scientific.net/MSF.556-557.335

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dependence of donor-acceptor pair (DAP) emission properties on impurity concentrations of N and B in 6H-SiC epilayers was investigated. Doped samples were grown by closed sublimation technique, and impurity concentrations were confirmed by secondary ion mass spectrometry (SIMS). Photo luminescence (PL) measurement results indicate that p-type 6H-SiC with N-A > N-D had extremely low DAP emission efficiency, whereas n-type 6H-SiC with N-A < N-D showed intense DAP emission. Moreover, n-type 6H-SiC with high N and B concentrations exceeding 10(18)cm(-3) is preferable for high DAP emission efficiency.

引用

页码：335 / +

页数：2

共 3 条

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Akasaki, I.
Kinoshita, H.
Furusho, T.
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[3] TIME-RESOLVED STUDIES ON RECOMBINATION LUMINESCENCE OF DONOR-ACCEPTOR PAIRS IN ZNSE
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (10): : 1546 - 1551

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