Spectroscopic techniques for characterization of high-mobility strained-Si CMOS

被引：10
作者：
Schmidt, J
Vogg, G
Bensch, F
Kreuzer, S
Ramm, P
Zollner, S
Liu, R
Wennekers, P
机构：
[1] Freescale Halbleiter GmbH, TSO, EMEA, D-13507 Berlin, Germany
[2] Fraunhofer IZM, D-80686 Munich, Germany
[3] Freescale Inc, Tempe, AZ 85287 USA
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2005年 / 8卷 / 1-3期
关键词：
strained silicon; CMOS; SiGe; Raman spectroscopy; spectroscopic ellipsometry; OPTICAL-CONSTANTS; RAMAN-SPECTRA; LAYERS; SILICON; ALLOYS; RELAXATION; SI1-XGEX;
D O I：
10.1016/j.mssp.2004.09.095
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The application of Raman spectroscopy and spectroscopic ellipsometry (SE) for characterization of strained silicon layers on SiGe virtual substrates is demonstrated. X-ray diffraction measurements (XRD) for calibration of Raman results have been carried out on strained Si/SiGe structures. For the composition-dependent shift of the Si-Si vibration in SiGe the relation omega(Si-Si) = 520.6 - 68x(Ge) is found, the strain shift coefficient for the longitudinal optical phonon in Si is estimated as -750 cm(-1). Three different samples with strained-Si layers on step-graded SiGe profiles with nominal final Ge concentrations in the range from 10% to 24% were investigated by XRD, transmission electron microscopy, Raman spectroscopy and SE to determinate the parameters Si cap thickness, strain in the Si layer, Ge content and relaxation of the SiGe film. A good correspondance of the results from all techniques is found. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：267 / 271
页数：5
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