Preparation of Copper Telluride Films by Co-Reduction of Cu(I) and Te(IV) Ions in Choline Chloride: Ethylene Glycol Ionic Liquid

被引:2
作者
Golgovici, Florentina [1 ]
Catrangiu, Adriana-Simona [1 ]
Stoian, Andrei Bogdan [1 ]
Anicai, Liana [2 ]
Visan, Teodor [1 ]
机构
[1] Univ Politehn Bucuresti, Fac Appl Chem & Mat Sci, Bucharest, Romania
[2] Univ Politehn Bucuresti, Ctr Surface Sci & Nanotechnol, Bucharest, Romania
关键词
Copper telluride; electroreduction of Cu+ and Te4+; electrodeposition; ionic liquids; choline chloride-ethylene glycol eutectic; THIN-FILMS; ELECTRODEPOSITION; CUINSE2; COMPOUND; CUGASE2; PHASE; CU; BIS(TRIFLUOROMETHYLSULFONYL)IMIDE; NANOCRYSTALS; FABRICATION;
D O I
10.1007/s11664-016-4552-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Cathodic processes of direct co-reduction of Cu+ and Te4+ ions on Pt electrode at 60A degrees C were investigated using cyclic voltammetry and electrochemical impedance spectroscopy techniques. The ionic liquid as background electrolyte consisted of a mixture of choline chloride and ethylene glycol (ChCl-EG 1:2 mol ratio) in which 5-20 mM CuCl and 8 mM TeO2 were dissolved. The voltammograms exhibited the following successive cathodic processes: Cu2+/Cu+ reduction, Te underpotential deposition, simultaneous deposition of Cu metal and CuTe compound, and deposition of Te-rich CuTe compound at the most negative potentials (from -0.5 V to -0.8 V). Corresponding dissolution or oxidation peaks were recorded on the anodic branch. The voltammetric results were confirmed by electrochemical impedance spectra. Copper telluride films have been synthesized on platinum substrate via potentiostatic electrodeposition at 60A degrees C. It was found from atomic force microscopy that CuTe film samples prepared from ChCl-EG + 5 mM CuCl + 8 mM TeO2 ionic liquid have high growth rates. The x-ray diffraction patterns of the deposited films from ChCl-EG + 10 mM CuCl + 8 mM TeO2 ionic liquid indicated the presence of a Cu2Te phase for film deposited at -0.7 V and a Cu0.656Te0.344 phase for film deposited at -0.6 V.
引用
收藏
页码:3629 / 3639
页数:11
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