Large-gap quantum spin Hall states in decorated stanene grown on a substrate

被引:118
作者
Xu, Yong [1 ,2 ,3 ,4 ]
Tang, Peizhe [1 ]
Zhang, Shou-Cheng [1 ,2 ,3 ]
机构
[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[2] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[3] Tsinghua Univ, Inst Adv Study, Beijing 100084, Peoples R China
[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China
关键词
2-DIMENSIONAL TOPOLOGICAL INSULATORS; TRANSITION; BISMUTH;
D O I
10.1103/PhysRevB.92.081112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional stanene is a promising candidate material for realizing a room-temperature quantum spin Hall (QSH) effect. Monolayer stanene has recently been fabricated by molecular beam epitaxy, but shows metallic features on a Bi2Te3(111) substrate, which motivates us to study the important influence of the substrate. Based on first-principles calculations, we find that varying substrate conditions considerably tunes the electronic properties of stanene. The supported stanene gives either trivial or QSH states, with significant Rashba splitting induced by inversion asymmetry. More importantly, large-gap (up to 0.3 eV) QSH states are realizable when growing stanene on various substrates, like the anion-terminated (111) surfaces of SrTe, PbTe, BaSe, and BaTe. These findings provide significant guidance for future research of stanene and large-gap QSH states.
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页数:5
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