How much room for BiGa heteroantisites in GaAs1-xBix?

被引：22

作者：

Ciatto, G. ^{[1
]}

Alippi, P. ^{[2
]}

Bonapasta, A. Amore ^{[2
]}

Tiedje, T. ^{[3
]}

机构：

[1] Synchrotron SOLEIL, LOrme Merisiers, F-91192 Gif Sur Yvette, France

[2] CNR Ist Struttura Mat, I-00016 Monterotondo, Italy

[3] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8W 3P6, Canada

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 14期

关键词：

antisite defects; bismuth; density functional theory; gallium arsenide; III-V semiconductors; relaxation; semiconductor epitaxial layers; X-ray absorption spectra;

D O I：

10.1063/1.3647635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We addressed the issue of bismuth heteroantisite defects (BiGa) in GaAs1-xBix/GaAs epilayers by coupling x-ray absorption spectroscopy at the bismuth edge with density functional theory calculations of the defect structure. Calculations predict a large relaxation of the Bi-As interatomic distances when Bi atoms substitute Ga, however we found no experimental evidence of it. Quantitative analysis of the x-ray absorption spectra allows us to establish a maximum concentration limit for Bi-Ga, which corresponds to about 5% of the total Bi atoms. BiGa do not account for the modifications in the spectra previously attributed to short range ordering. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3647635]

引用

页数：3

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