Low-temperature firing and microwave dielectric properties of ZnO-Nb2O5-TiO2-SnO2 ceramics with CuO-V2O5

被引：26

作者：

Zhang, QL ^{[1
]}

Yang, H ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat & Engn, Hangzhou 310027, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2005年 / 40卷 / 11期

关键词：

ceramics; electronic materials; X-ray diffraction; dielectric properties;

D O I：

10.1016/j.materresbull.2005.06.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of CuO-V2O5 addition on the sintering temperature and microwave dielectric properties of ZnO-Nb2O5-TiO2-SnO2 were investigated. The CuO-V2O5 addition lowered the sintering temperature of ZnO-Nb2O5TiO2-SnO2 ceramics effectively from 1150 to 860 degrees C due to the liquid-phase effect Of Cu2V2O7 and Cu-3(VO4)(2), as observed by XRD. The microwave dielectric properties were found to strongly correlate with the sintering temperature and the amount Of CuO-V2O5 addition. The maximum Qf values decreased with increasing CuO-V2O5 content, due to the formation of the second phase, Cu-3(VO4)(2) and CuNbO3. Zero tau(f) value can be obtained by properly adjusting the sintering temperature. At 860 degrees C, ZnO-Nb2O5-TiO2-SnO2 ceramics with 1.5 wt.% CuO-V2O5 gave excellent microwave dielectric properties: epsilon(r) = 42.3, Qf = 9000 GHz and tau(f) = 8 ppm/degrees C. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1891 / 1898

页数：8

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