Microstructure and thermoelectric properties of In2O3/ITO thin film thermocouples with Al2O3 protecting layer

被引：16

作者：

Liu, Yantao ^{[1
,2
,4
]}

Ren, Wei ^{[1
,2
]}

Shi, Peng ^{[1
,2
]}

Liu, Dan ^{[1
,2
]}

Zhang, Yijun ^{[1
,2
]}

Liu, Ming ^{[1
,2
]}

Lin, Qijing ^{[3
]}

Tian, Bian ^{[3
]}

Jiang, Zhuangde ^{[3
]}

机构：

[1] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Shaanxi, Peoples R China

[2] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Int Ctr Dielect Res, Xian 710049, Shaanxi, Peoples R China

[3] Xi An Jiao Tong Univ, Int Joint Lab Micro Nano Mfg & Measurement Techno, Sch Mech Engn, Xian 710049, Shaanxi, Peoples R China

[4] Xian Univ Technol, Dept Elect Engn, Xian 710048, Shaanxi, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 02期

关键词：

TEMPERATURE;

D O I：

10.1007/s10854-018-0450-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In2O3/ITO thin film thermocouples (TFTCs) with alumina protecting layer were fabricated on alumina substrates. The effects of protecting layer on their performance at higher temperature and long term service were investigated accordingly. In2O3 and ITO thin films were prepared by radio frequency magnetron sputtering methods, while the alumina protecting layer was prepared by traditional spin-coating methods. Microstructural and thermoelectric properties of the In2O3/ITO TFTCs with and without alumina (Al2O3) protecting layer were investigated as a function of sintering time from 2 to 10h at 1250 degrees C. The results show that, the existence of alumina protecting layer can effectively increase the performance capabilities of thermocouples at high temperatures by inhibiting the volatilization of the thin film. In2O3/ITO TFTCs with protecting layer can work normally over 10h at 1250 degrees C while Seebeck coefficient is 131.7 mu V/degrees C. The drift rate can reach 3.05 degrees C/h, which is much better than those without protecting layer.

引用

页码：1786 / 1793

页数：8

共 24 条

[1] Properties of indium tin oxide films with indium tin modulation layers prepared by nano-scale controlled reactive magnetron sputtering [J].