Wide band-gap tuning Cu2ZnSn1-χGeχS4 single crystals: Optical and vibrational properties

被引:44
作者
Garcia-Llamas, E. [1 ]
Merino, J. M. [1 ]
Serna, R. [2 ]
Fontane, X. [3 ]
Victorov, I. A. [4 ]
Perez-Rodriguez, A. [5 ]
Leon, M. [1 ]
Bodnar, I. V. [6 ]
Izquierdo-Roca, V. [2 ]
Caballero, R. [1 ]
机构
[1] Univ Autonoma Madrid, Dept Fis Aplicada, C Francisco Tomas & Valiente 7, E-28049 Madrid, Spain
[2] CSIC, Inst Opt, Laser Proc Grp, C Serrano 121, Madrid 28006, Spain
[3] Catalonia Inst Energy Res, C Jardins Dones Negre 1 2pl, St Adria Besos Barcelona 08930, Spain
[4] Acad Sci Belarus, Inst Phys Solids & Semicond, 17P Brovka Str, Minsk 220072, BELARUS
[5] Univ Barcelona, Dept Elect, IN2UB, C Marti & Franques 1, E-08028 Barcelona, Spain
[6] Belarusian State Univ Informat & Radioelect, P Browski Str 6, Minsk 220013, BELARUS
关键词
Cu2ZnSn1-chi Ge chi S4 kesterite; Spectroscopic ellipsometry; Raman scattering; Band-gap tuning; Solar cells; RESONANT RAMAN-SCATTERING; FILM SOLAR-CELLS; CU2ZN(SN1-XGEX)S-4 NANOCRYSTALS; ELECTRONIC-STRUCTURE; THIN-FILMS; TEMPERATURE; EFFICIENCY; STANNITE; GROWTH;
D O I
10.1016/j.solmat.2015.12.021
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The linear optical properties of Cu2ZnSn1-chi Ge chi S4 high quality single crystals with a wide range of Ge contents (chi = 0.1, 0.3, 0.5, 0.7, 0.9 and 1) have been investigated in the ultraviolet and near infrared range using spectroscopic ellipsometry measurements. From the analysis of the complex dielectric function spectra it has been found that the bandgap E-o increases continuously from 1.49 eV to 2.25 eV with the Ge content. Furthermore, the evolution of the interband transitions E-1A and E-1B has been also determined. Raman scattering using three different excitation wavelengths and its analysis have been performed to confirm the absence of secondary phases in the samples, and to distinguish between stannite, wurtzite, wurzstannite and kesterite structures. Additionally, the analysis of the high resolution Raman spectra obtained in samples with different [Ge]/([Ge] + [Sn]) ratios allows describing a bimodal behavior of the dominant A modes. The understanding of the incorporation of Ge into the Cu2ZnSnS4 lattice is fundamental in order to develop efficient bandgap engineering of these compounds towards the fabrication of kesterite based solar cells with enhanced performance. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:147 / 153
页数:7
相关论文
共 49 条
[1]   Optical properties and electronic structure of polycrystalline Ag1-xCuxInSe2 alloys -: art. no. 103515 [J].
Albornoz, JG ;
Serna, R ;
León, M .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
[2]  
[Anonymous], THESIS
[3]   Thin film solar cells based on the ternary compound Cu2SnS3 [J].
Berg, Dominik M. ;
Djemour, Rabie ;
Guetay, Levent ;
Zoppi, Guillaume ;
Siebentritt, Susanne ;
Dale, Phillip J. .
THIN SOLID FILMS, 2012, 520 (19) :6291-6294
[4]   Growth and properties of CuAlS2xSe2(1-x) single crystals [J].
Bodnar', IV .
INORGANIC MATERIALS, 2002, 38 (07) :647-651
[5]   Towards the growth of Cu2ZnSn1-xGexS4 thin films by a single-stage process: Effect of substrate temperature and composition [J].
Caballero, R. ;
Cano-Torres, J. M. ;
Garcia-Llamas, E. ;
Fontane, X. ;
Perez-Rodriguez, A. ;
Greiner, D. ;
Kaufmann, C. A. ;
Merino, J. M. ;
Victorov, J. ;
Baraldi, G. ;
Valakh, M. ;
Bodnar, I. ;
Izquierdo-Roca, V. ;
Leon, M. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2015, 139 :1-9
[6]   Band-gap engineering of Cu2ZnSn1-xGexS4 single crystals and influence of the surface properties [J].
Caballero, R. ;
Victorov, I. ;
Serna, R. ;
Cano-Torres, J. M. ;
Maffiotte, C. ;
Garcia-Llamas, E. ;
Merino, J. M. ;
Valakh, M. ;
Bodnar, I. ;
Leon, M. .
ACTA MATERIALIA, 2014, 79 :181-187
[7]   LONG-WAVELENGTH PHONONS IN MIXED-VALENCE SEMICONDUCTOR SNIISNIVS3 [J].
CHANDRASEKHAR, HR ;
MEAD, DG .
PHYSICAL REVIEW B, 1979, 19 (02) :932-937
[8]   IR AND RAMAN-SPECTRA OF 4-6 COMPOUNDS SNS AND SNSE [J].
CHANDRASEKHAR, HR ;
HUMPHREYS, RG ;
ZWICK, U ;
CARDONA, M .
PHYSICAL REVIEW B, 1977, 15 (04) :2177-2183
[9]   Electronic structure and stability of quaternary chalcogenide semiconductors derived from cation cross-substitution of II-VI and I-III-VI2 compounds [J].
Chen, Shiyou ;
Gong, X. G. ;
Walsh, Aron ;
Wei, Su-Huai .
PHYSICAL REVIEW B, 2009, 79 (16)
[10]   Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: First-principles insights [J].
Chen, Shiyou ;
Gong, X. G. ;
Walsh, Aron ;
Wei, Su-Huai .
APPLIED PHYSICS LETTERS, 2009, 94 (04)