Analytical model for threshold voltage and I-V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET

被引：82
作者：
Kranti, A
Haldar, S
Gupta, RS
机构：
[1] Univ Delhi, Dept Elect Sci, Semicond Devices Res Lab, New Delhi 110021, India
[2] Univ Delhi, Motilal Nehru Coll, Dept Phys, New Delhi 110021, India
来源：
MICROELECTRONIC ENGINEERING | 2001年 / 56卷 / 3-4期
关键词：
MOSFET; double gate MOSFET; surrounding/cylindrical gate MOSFET; short channel effects;
D O I：
10.1016/S0167-9317(00)00419-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present paper proposes an analytical model of threshold voltage and current voltage characteristics for short channel fully depleted cylindrical/surrounding gate MOSFET based on the solution of Poisson's equation in cylindrical coordinates. The analysis takes into account the field-dependent mobility, velocity saturation and the effect of source/drain resistance. Advantages of surrounding/cylindrical structure over the conventional planar structure are investigated in detail. The results so obtained are in good agreement with simulated data available in the literature. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：241 / 259
页数：19
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