First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

被引：86

作者：

Clima, S. ^{[1
]}

Chen, Y. Y. ^{[1
,2
]}

Degraeve, R. ^{[1
]}

Mees, M. ^{[1
,2
]}

Sankaran, K. ^{[1
,3
,4
]}

Govoreanu, B. ^{[1
]}

Jurczak, M. ^{[1
]}

De Gendt, S. ^{[1
,2
]}

Pourtois, G. ^{[1
,5
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, B-3001 Louvain, Belgium

[3] Catholic Univ Louvain, ETSF, B-1348 Louvain, Belgium

[4] Catholic Univ Louvain, IMCN, B-1348 Louvain, Belgium

[5] Univ Antwerp, PLASMANT, B-2610 Antwerp, Belgium

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 13期

关键词：

THRESHOLD VOLTAGE INSTABILITIES; MOLECULAR-DYNAMICS; GATE; DEFECTS; OXIDE;

D O I：

10.1063/1.3697690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transition metal oxide-based resistor random access memory (RRAM) takes advantage of oxygen-related defects in its principle of operation. Since the change in resistivity of the material is controlled by the oxygen deficiency level, it is of major importance to quantify the kinetics of the oxygen diffusion, key factor for oxide stoichiometry. Ab initio accelerated molecular dynamics techniques are employed to investigate the oxygen diffusivity in amorphous hafnia (HfOx, x = 1.97, 1.0, 0.5). The computed kinetics is in agreement with experimental measurements. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697690]

引用

页数：4

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