0.18 um thin oxide CMOS transceiver front-end with integrated TX/RX commutator for low cost Bluetooth solutions

被引：6
|
作者：
Knopik, V [1 ]
Belot, D [1 ]
机构：
[1] STMicroelectronics, Cent R&D, F-38926 Crolles, France
来源：
ESSCIRC 2003: PROCEEDINGS OF THE 29TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE | 2003年
关键词：
D O I：
10.1109/ESSCIRC.2003.1257225
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents the improvement of a first RF front end design for Bluetooth without using any antenna switch [1]. It consists of reducing the number of inductances, 3 instead of 7, and using thin oxide MOS instead of thick oxide ones without degrading the overall performance. The receiver is composed of a low noise amplifier and a mixer. The former is suitable for Zero-IF, Quasi Zero IF or Low IF topology for which NF is 210, 16dB and 14dB respectively. The transmitter is composed of an image rejection mixer and a power amplifier. It can deliver 5dBm at the compression point with an image rejection better than -40dBc. The chip has been integrated in 0.18mum 1.8V STMicroelectronics RFCMOS technology. It consumes 27mA in TX mode and 5.2mA in RX mode.
引用
收藏
页码：675 / 678
页数：4
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