Photoemission microscopy study of the two metal-insulator transitions in Cr-doped V2O3

被引：10

作者：

Mansart, B. ^{[1
]}

Barinov, A. ^{[2
]}

Dudin, P. ^{[2
]}

Baldassarre, L. ^{[2
]}

Perucchi, A. ^{[2
]}

Papalazarou, E. ^{[1
]}

Metcalf, P. ^{[3
]}

Lupi, S. ^{[4
,5
]}

Marsi, M. ^{[1
]}

机构：

[1] Univ Paris 11, Lab Phys Solides, CNRS, UMR 8502, F-91405 Orsay, France

[2] Sincrotrone Trieste SCpA, I-34012 Trieste, Italy

[3] Purdue Univ, Dept Chem, W Lafayette, IN 47907 USA

[4] Univ Roma La Sapienza, CNR, IOM, I-00185 Rome, Italy

[5] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 01期

关键词：

MOTT TRANSITION; SPECTROMICROSCOPY; SPECTROSCOPY; EVOLUTION; ELETTRA;

D O I：

10.1063/1.3675445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a spectromicroscopy study of the two distinct metal-insulator transitions in (V1-xCrx)(2)O-3, x = 0.011. The coexistence of metallic and insulating domains was observed with scanning photoelectron microscopy for both the paramagnetic insulator-paramagnetic metal and paramagnetic metal-antiferromagnetic insulator transitions, evidencing a clear correlation between their nucleation regions. Although these two transitions are very different in nature and underlying mechanism, in both cases the morphology of their phase separation is influenced by structural inhomogeneities. These results demonstrate the general relevance of strain caused by local lattice distortions in guiding the intrinsic tendency towards phase separation in Mott materials. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675445]

引用

页数：4