I-V characterisation of resonant tunneling diodes

被引：0

作者：

Dózsa, L ^{[1
]}

Riesz, F ^{[1
]}

Tuyen, VV ^{[1
]}

Szentpáli, B ^{[1
]}

Muller, A ^{[1
]}

机构：

[1] Hungarian Acad Sci, Tech Phys Res Inst, H-1325 Budapest, Hungary

来源：

CAS'98 PROCEEDINGS - 1998 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2 | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current-voltage characteristics of AlAs/GaAs resonant tunnelling diodes are measured in steady state circumstances and by a new method in the submicrosecond time scale. The results show that I-V characteristics are sensitive to the measuring time due to internal transient of the device. The internal transients are identified as thermal transients and as charge accumulation at the barriers and in localised electronic states. It is concluded that a reliable I-V characterisation of these devices is possible only when the results measured by different methods is compared and analysed properly.

引用

页码：653 / 656

页数：4

共 13 条

[1] OSCILLATIONS UP TO 420 GHZ IN GAAS/ALAS RESONANT TUNNELING DIODES [J].

BROWN, ER ;

SOLLNER, TCLG ;

PARKER, CD ;

GOODHUE, WD ;

CHEN, CL .

APPLIED PHYSICS LETTERS, 1989, 55 (17) :1777-1779

[2] NEGATIVE-RESISTANCE CURVE TRACER [J].

CHUA, LO ;

ZHONG, GQ .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1985, 32 (06) :569-582

[3]

Dozsa L, 1997, PHYS STATUS SOLIDI A, V163, pR1, DOI 10.1002/1521-396X(199709)163:1<R1::AID-PSSA99991>3.0.CO

[4]

2-G

[5] ELECTRON-PHONON INTERACTION DURING RESONANT-TUNNELING THROUGH A DOUBLE-BARRIER HETEROSTRUCTURE [J].

FIGIELSKI, T ;

MAKOSA, A ;

WOSINSKI, T ;

HARNESS, PC ;

SINGER, KE .

SOLID STATE COMMUNICATIONS, 1994, 91 (11) :913-917

[6] CURRENT BISTABILITY IN DOUBLE-BARRIER RESONANT-TUNNELING DEVICES [J].

FOSTER, TJ ;

LEADBEATER, ML ;

EAVES, L ;

HENINI, M ;

HUGHES, OH ;

PAYLING, CA ;

SHEARD, FW ;

SIMMONDS, PE ;

TOOMBS, GA ;

HILL, G ;

PATE, MA .

PHYSICAL REVIEW B, 1989, 39 (09) :6205-6207

[7] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1256-1259

[8] MAGNETIC-FIELD STUDIES OF ELASTIC-SCATTERING AND OPTIC-PHONON EMISSION IN RESONANT-TUNNELING DEVICES [J].

LEADBEATER, ML ;

ALVES, ES ;

EAVES, L ;

HENINI, M ;

HUGHES, OH ;

CELESTE, A ;

PORTAL, JC ;

HILL, G ;

PATE, MA .

PHYSICAL REVIEW B, 1989, 39 (05) :3438-3441

[9] A NEW TECHNIQUE FOR DIRECTLY PROBING THE INTRINSIC TRISTABILITY AN DITS TEMPERATURE-DEPENDENCE IN A RESONANT-TUNNELING DIODE [J].

LERCH, MLF ;

MARTIN, AD ;

SIMMONDS, PE ;

EAVES, L ;

LEADBEATER, ML .

SOLID-STATE ELECTRONICS, 1994, 37 (4-6) :961-964

[10] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - COMMENT [J].

SOLLNER, TCLG .

PHYSICAL REVIEW LETTERS, 1987, 59 (14) :1622-1622

← 1 2 →