Atom probe study of Cu-poor to Cu-rich transition during Cu(In,Ga)Se2 growth

被引：30

作者：

Couzinie-Devy, F. ^{[1
,3
]}

Cadel, E. ^{[1
,3
]}

Barreau, N. ^{[2
]}

Arzel, L. ^{[2
]}

Pareige, P. ^{[1
,3
]}

机构：

[1] Univ Rouen, GPM, UMR CNRS 6634, F-76801 St Etienne, France

[2] UMR CNRS 6502, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France

[3] INSA Rouen, GPM, UMR CNRS 6634, F-76801 St Etienne, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 23期

关键词：

FILMS; MODEL; RECRYSTALLIZATION; EVAPORATION; CUINSE2; SODIUM;

D O I：

10.1063/1.3665948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic scale chemistry of polycrystalline Cu(In,Ga)Se-2 (CIGSe) thin film has been characterized at key points of the 3-stage process using atom probe tomography. 3D atom distributions have been reconstructed when the layer is Cu-poor ([Cu]/([Ga] vertical bar [In]) < 1), Cu-rich ([Cu]/([Ga] vertical bar [In]) > 1), and at the end of the process. Particular attention has been devoted to grain boundary composition and Na atomic distribution within the CIGSe layer. Significant variation of composition is highlighted during the growing process, providing fundamental information helping the understanding of high efficiency CIGSe formation. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3665948]

引用

页数：3

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