Conduction at Domain Walls in Insulating Pb(Zr0.2Ti0.8)O3 Thin Films

被引：324

作者：

Guyonnet, Jill ^{[1
]}

Gaponenko, Iaroslav ^{[1
]}

Gariglio, Stefano ^{[1
]}

Paruch, Patrycja ^{[1
]}

机构：

[1] Univ Geneva, DPMC, CH-1211 Geneva 4, Switzerland

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 45期

基金：

瑞士国家科学基金会;

关键词：

ferroelectric materials; conduction; domain walls; atomic force microscopy; PHYSICS;

D O I：

10.1002/adma.201102254

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Domain wall conduction in insulating Pb(Zr0.2Ti0.8)O-3 thin films is demonstrated. The observed electrical conduction currents can be clearly differentiated from displacement currents associated with ferroelectric polarization switching. The domain wall conduction, nonlinear and highly asymmetric due to the specific local probe measurement geometry, shows thermal activation at high temperatures, and high stability over time.

引用

页码：5377 / +

页数：7

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