MOCVD of TiO2 thin films from a modified titanium alkoxide precursor

A new titanium precursor, [Ti(OPr')(2)(deacam)(2)] (deacam = N, N-diethylacetoacetamide), was developed by the reaction of the parent Ti alkoxide with the beta-ketoamide. The compound, obtained as a monomeric six-coordinated complex, was used in metal organic chemical vapor deposition (MOCVD) of TiO2 both as a single source precursor (SSP) and in the presence of oxygen. The high thermal stability of [Ti(OPr')(2)(deacam)(2)] enabled the fabrication of TiO2 films over a wide temperature range, with steady growth rates between 500 and 800 degrees C. The microstructure of the obtained systems was analyzed by X-ray diffraction (XRD) and Raman spectroscopy, whereas atomic force microscopy (AFM) and field emission-scanning electron microscopy (FE-SEM) measurements were performed to investigate the surface morphology and nanoorganization. Film composition was investigated by complementary techniques like Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS). The electrical properties of the layers were investigated by performing capacitance voltage (C-V) and leakage current measurements. (C) 2015 WILEY - VCH Verlag GmbH & Co. KGaA, Weinheim