A Novel Detachable Gate Driver Unit With Ultralow Inductance for Integrated Gate Commutated Thyristor

被引：2

作者：

Shang, Jie ^{[1
]}

Chen, Zhengyu ^{[2
]}

Zhao, Biao ^{[1
]}

Yu, Zhanqing ^{[1
]}

Wu, Jinpeng ^{[1
]}

Dong, Lin ^{[2
]}

Zeng, Rong ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China

[2] Sichuan Energy Internet Res Inst, DC Res Ctr, Chengdu 610299, Peoples R China

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2022年 / 37卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Gate driver unit (GDU); integrated gate commutated thyristor (IGCT); power electronics; ultralow inductance; IMPEDANCE;

D O I：

10.1109/TPEL.2022.3187697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Under the background of clean energy connected to the grid, the high-capacity power electronics device integrated gate commutated thyristor (IGCT) has a bright future. In order to increase the convenience of replacement and longevity of service, a novel detachable gate driver unit (DGDU) concept for IGCT is proposed in this letter. To ensure the turn-OFF capability, both connection scheme and board optimization on DGDU are applied to minimize the stray inductance. Besides, the effects because of the detachable connecter on the structure and thermal characteristics are analyzed. Afterward, an overlapping scheme of DGDU with ultralow inductance is proposed for IGCT. Finally, a 4-inch prototype and a single-phase full-bridge platform are developed for the test. The turn-OFF capability of DGDU is verified by pulse experiment, which could turn-OFF a 5 kA current successfully. The stray inductance of DGDU is calculated based on the experimental result and is only 4% larger than conventional GDU, which means the commutation capability has little decrease. Furthermore, the continuous running reliability is verified by 2200 V-dc-voltage, 1300 A-effective-current power cycling experiments.

引用

页码：14000 / 14004

页数：5

共 7 条

[1]

[Anonymous], 2006, PROC 4 INT C INTEGR

[2] Recent developments of high power converters for industry and traction applications [J].

Bernet, S .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2000, 15 (06) :1102-1117

[3]

Bragard M., 2011, PROC 14 EUR C POWER, P1

[4] An Advanced 4-in Integrated Emitter Turn-OFF Thyristor With Ultralow Commutation Impedance to Achieve 8 kA Turn-OFF Capability: Comprehensive Analysis, Design, and Experiments [J].

Chen, Zhengyu ;

Yu, Zhanqing ;

Zhao, Biao ;

Liu, Jiapeng ;

Shang, Jie ;

De Doncker, Rik W. ;

Zeng, Rong .

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2021, 68 (10) :9444-9454

[5] Stray Impedance Measurement and Improvement of High-Power IGCT Gate Driver Units [J].

Chen, Zhengyu ;

Yu, Zhanqing ;

Liu, Xuan ;

Liu, Jiapeng ;

Zeng, Rong .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 34 (07) :6639-6647

[6]

Nistor I, 2009, INT SEMICONDUCT CON, P65, DOI 10.1109/SMICND.2009.5336607

[7]

Zeng R, 2019, IEEE IND ELECTRON M, V13, P4, DOI 10.1109/MIE.2019.2906952

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