Demonstration of ultra-small 5 x 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%

被引：19

作者：

Li, Panpan ^{[1
]}

Li, Hongjian ^{[1
]}

Yang, Yunxuan ^{[2
]}

Zhang, Haojun ^{[1
]}

Shapturenka, Pavel ^{[3
]}

Wong, Matthew ^{[1
]}

Lynsky, Cheyenne ^{[1
]}

Iza, Mike ^{[1
]}

Gordon, Michael J. ^{[3
]}

Speck, James S. ^{[1
]}

Nakamura, Shuji ^{[1
]}

DenBaars, Steven P. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2022年 / 120卷 / 04期

关键词：

PERFORMANCE; BLUE;

D O I：

10.1063/5.0078771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Red micro-size light-emitting diodes (mu LEDs) less than 10 x 10 mu m(2) are crucial for augmented reality (AR) and virtual reality (VR) applications. However, they remain very challenging since the common AlInGaP red mu LEDs with such small size suffer from a dramatic reduction in the external quantum efficiency. In this work, we demonstrate ultra-small 5 x 5 mu m(2) 607 nm amber mu LEDs using InGaN materials, which show an EQE over 2% and an ultra-low reverse current of 10(-9) A at -5 V. This demonstration suggests promising results of ultra-small InGaN mu LEDs for AR and VR displays.

引用

页数：4

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