Annealing effects on the photoresponse properties of CdSe nanocrystal thin films

被引：7

作者：

Lou, Shiyun ^{[1
]}

Zhou, Changhua ^{[1
]}

Wang, Hongzhe ^{[1
]}

Shen, Huaibin ^{[1
]}

Cheng, Gang ^{[1
]}

Du, Zuliang ^{[1
]}

Zhou, Shaomin ^{[1
]}

Li, Lin Song ^{[1
]}

机构：

[1] Henan Univ, Minist Educ, Key Lab Special Funct Mat, Kaifeng 475004, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2011年 / 128卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Annealing; Photoresponse; CdSe nanocrystal thin films; Kelvin probe force microscopy; PROBE FORCE MICROSCOPY; QUANTUM DOTS; SEMICONDUCTOR NANOCRYSTALS; SOLAR-CELLS; PHOTODETECTORS; SURFACE; ELECTROLUMINESCENCE; DEPOSITION; CDTE;

D O I：

10.1016/j.matchemphys.2011.03.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photoresponse properties of the as-prepared and annealed close-packed CdSe nanocrystal (NC) films were investigated under laser illumination by Kelvin probe force microscopy. The annealing process improved the photoresponse speed of the CdSe NC films. The work function of the annealed CdSe NC films changed more rapidly than that of the non-annealed film in air at room temperature. Combined with X-ray photoelectron spectroscopy measurements and thermogravimetric analysis, the observed phenomena can be interpreted that annealing process removed the organic capping agents completely and eliminated oxide on the CdSe surface, which formed the tunnel barrier between NCs in the CdSe NC films. Consequently, it improved the separation rate of photoelectric charges and thus provided high speed photoresponse. (c) 2011 Elsevier B.V. All rights reserved.

引用

页码：483 / 488

页数：6

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