Charge control in laterally coupled double quantum dots

被引：22

作者：

Munoz-Matutano, G. ^{[1
]}

Royo, M. ^{[2
]}

Climente, J. I. ^{[2
]}

Canet-Ferrer, J. ^{[1
]}

Fuster, D. ^{[1
]}

Alonso-Gonzalez, P. ^{[3
]}

Fernandez-Martinez, I. ^{[3
]}

Martinez-Pastor, J. ^{[1
]}

Gonzalez, Y. ^{[3
]}

Gonzalez, L. ^{[3
]}

Briones, F. ^{[3
]}

Alen, B. ^{[3
]}

机构：

[1] Univ Politecn Valencia, Inst Ciencia Mat, ICMUV, E-46071 Valencia, Spain

[2] Univ Jaume 1, Dept Quim Fis & Analit, Castellon de La Plana, Spain

[3] CSIC, CNM, IMM, Madrid 28760, Spain

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 04期

关键词：

ELECTRIC-FIELD; GAAS;

D O I：

10.1103/PhysRevB.84.041308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias, leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunneling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system.

引用

页数：4

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