Valence-band discontinuity at the AlN/Si interface

被引:18
作者
Ishikawa, H [1 ]
Zhang, BJ
Egawa, T
Jimbo, T
机构
[1] Nagoya Inst Technol, Res Ctr Nano Device & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan
[2] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 10期
关键词
AIN; Si; GaN; MOCVD; band discontinuity;
D O I
10.1143/JJAP.42.6413
中图分类号
O59 [应用物理学];
学科分类号
摘要
The major problems of GaN-based light-emitting diodes on Si are their high series resistances and high operating voltages due to the large band discontinuity at the AIN/Si interface. We have observed the valence-band discontinuity at the AIN/Si interface using X-ray photoelectron spectroscopy (XPS). The valence- and conduction-band discontinuity values at the AIN/Si interface were found to be 2.8 +/- 0.4 eV and 2.3 +/- 0.4eV, respectively.
引用
收藏
页码:6413 / 6414
页数:2
相关论文
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