1.3 μm GaAs-based quantum well and quantum dot lasers:: Comparative analysis

被引：8

作者：

Egorov, AY ^{[1
]}

Zhukov, AE ^{[1
]}

Ustinov, VM ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

diode laser; molecular beam epitaxy; nitrogen; quantum dots;

D O I：

10.1007/s11664-001-0086-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New generation of long-wavelength (1.3 mum) GaAs based lasers is discussed. The modal gain, threshold current, quantum efficiency characteristics and temperature stability of lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots are compared.

引用

页码：477 / 481

页数：5

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