Investigation of stress-induced (100) platelet formation and surface exfoliation in plasma hydrogenated Si

被引：6

作者：

Di, Zengfeng ^{[1
]}

Wang, Yongqiang ^{[1
]}

Nastasi, Michael ^{[1
]}

Rossi, Francois ^{[2
]}

Lee, Jung-Kun ^{[3
]}

Shao, Lin ^{[4
]}

Thompson, Phillip E. ^{[5
]}

机构：

[1] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[2] Commiss European Communities, Joint Res Ctr, I-21020 Ispra, Italy

[3] Univ Pittsburgh, Dept Mech Engn & Mat Sci, Pittsburgh, PA 15261 USA

[4] Texas A&M Univ, Dept Nucl Engn, College Stn, TX 77843 USA

[5] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 24期

关键词：

D O I：

10.1063/1.2822414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the mechanisms underlying stress-induced platelet formation during plasma hydrogenation. The stress is purposely introduced by a buried SiGe stained layer in a Si substrate. During plasma hydrogenation, diffusing H is trapped in the region of the SiGe layer and H platelets are formed. The platelet orientation is controlled by the in-plane compressive stress, which favors nucleation and growth of platelets in the plane of stress and parallel to the substrate surface, and ultimately leads to controlled fracture along the SiGe layer. Also, the Si/SiGe/Si structure is found to be more efficient in utilizing H for platelet formation and growth compared to H ion implanted Si because there are fewer defects to trap H (e.g., VnHm and InHm); therefore, the total H dose needed for layer exfoliation is greatly reduced. (c) 2007 American Institute of Physics.

引用

页数：3

共 23 条

[1] Efficient production of silicon-on-insulator films by co-implantation of He+ with H+ [J].