ICP dry etching of ZnO and effects of hydrogen

被引：18

作者：

Ip, K ^{[1
]}

Overberg, ME

Baik, KW

Wilson, RG

Kucheyev, SO

Williams, JS

Jagadish, C

Ren, F

Heo, YW

Norton, DP

Zavada, JM

Pearton, SJ

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[4] USA, Res Off, Res Triangle Pk, NC 27709 USA

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0038-1101(03)00211-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two different plasma chemistries for etching ZnO were examined. Both Cl-2/Ar and CH4/H-2/Ar produced etch rates which increased linearly with rf power, reaching values of similar to1200 Angstrom/min for Cl-2/Ar and similar to3000 Angstrom/min for CH4/H-2/Ar. The evolution of surface morphology, surface composition, and PL intensity as a function of energy during etching were monitored. The effect of H in ZnO was studied using direct implantation at doses of 10(15)-10(16) cm(-2), followed by annealing at 500-700 degreesC. The hydrogen shows significant outdiffusion at 500 degreesC and is below the detection limits of SIMS after 700 degreesC anneals. SEM of the etched features showed anisotropic sidewalls, indicative of an ion-driven etch mechanism. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：2289 / 2294

页数：6

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