Effect of porogen residue on electrical characteristics of ultra low-k materials

被引：36

作者：

Baklanov, Mikhail R. ^{[1
]}

Zhao, Larry ^{[1
]}

Van Besien, Els ^{[1
]}

Pantouvaki, Marianna ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 06期

关键词：

Low-k; Porogen residue;

D O I：

10.1016/j.mee.2010.12.077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Porogen residue (sp(2) hybridized carbon) formed during UV curing of low-k materials increases leakage current and decreases breakdown voltage of low-k materials. The amount of porogen residue increases with increasing porosity of PECVD low-k films because of larger amount of co-deposited porogen. Electrical characteristics of PECVD ultra low-k films are significantly worse in comparison with CVD and SOG low-k film prepared without porogen. SOG low-k films prepared by self-assembling of nanocrystalline silica demonstrate very low leakage current. Removal of porogen residue significantly improves the electrical characteristics. Therefore, preparation of porogen residue free low-k films is an important challenge of future scaling of low-k materials. (c) 2010 Elsevier B.V. All rights reserved.

引用

页码：990 / 993

页数：4

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