Investigations on Compositional, Structural and Optical Properties of Thermally Oxidized HfO2 Films

被引：2
作者：
Venkataiah, S. [1 ]
Chandra, S. V. Jagadeesh [2 ,3 ]
Babu, M. Vasu [4 ]
Uthanna, S. [1 ]
机构：
[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
[2] GITAM Deemed Univ, GITAM Inst Sci, Dept Phys, Visakhapatnam 530045, Andhra Pradesh, India
[3] Univ Nova Lisboa, Fac Sci & Technol, Mat Sci Dept, CENIMAT I3N, Caparica, Portugal
[4] Vignan Inst Technol & Sci, Dept Elect & Instrumentat, Deshmukhi 508234, India
来源：
ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING | 2022年 / 47卷 / 06期
关键词：
Hafnium oxide; Dc magnetron sputtering; Thermal oxidation; Stoichiometry; Crystal structure; Optical band gap; THIN-FILMS; ELECTRICAL-PROPERTIES; COPPER(II); DEPOSITION; REMOVAL; WATER;
D O I：
10.1007/s13369-021-06218-x
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Thermal oxidation at various temperatures on magnetron sputtered hafnium films shown significant effect on stoichiometry, crystallographic structure and electrical and optical properties. X-ray photoelectron spectroscopy confirms the stoichiometry of HfO2 films by showing the relevant shift in the core level binding energies of hafnium and oxygen after increasing the oxidation temperature to 600 degrees C. The EDAX analysis also confirmed the required composition of HfO2 films. The presence of monoclinic HfO2 structure was identified by XRD for the films oxidized at 600 degrees C. The interface quality at HfO2/Si stacks was improved as a function of oxidation temperature. The optical band gap and the refractive index of the HfO2 films increased with increase of oxidation temperature.
引用
收藏
页码：7541 / 7549
页数：9
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