Metal Organic Spin Transistor

被引：27

作者：

Goren, Naama ^{[1
,2
]}

Das, Tapan Kumar ^{[3
]}

Brown, Noam ^{[4
]}

Gilead, Sharon ^{[4
]}

Yochelis, Shira ^{[1
,2
]}

Gazit, Ehud ^{[4
]}

Naaman, Ron ^{[3
]}

Paltiel, Yossi ^{[1
,2
]}

机构：

[1] Hebrew Univ Jerusalem, Appl Phys Dept, IL-91904 Jerusalem, Israel

[2] Hebrew Univ Jerusalem, Ctr Nanosci & Nanotechnol, IL-91904 Jerusalem, Israel

[3] Weizmann Inst Sci, Dept Chem & Biol Phys, IL-76100 Rehovot, Israel

[4] Tel Aviv Univ, George S Wise Fac Life Sci, Shmunis Sch Biomed & Canc Res, Dept Mol Microbiol & Biotechnol, IL-6997801 Tel Aviv, Israel

来源：

NANO LETTERS | 2021年 / 21卷 / 20期

关键词：

Organic memory; organo-metallic device; chiral-induced spin selectivity; spin transistor; multistate memory; spintronics; SELECTIVITY; MAGNETORESISTANCE;

D O I：

10.1021/acs.nanolett.1c01865

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic molecules and specifically bio-organic systems are attractive for applications due to their low cost, variability, environmental friendliness, and facile manufacturing in a bottom-up fashion. However, due to their relatively low conductivity, their actual application is very limited. Chiral metallo-bio-organic crystals, on the other hand, have improved conduction and in addition interesting magnetic properties. We developed a spin transistor using these crystals and based on the chiral-induced spin selectivity effect. This device features a memristor type behavior, which depend on trapping both charges and spins. The spin properties are monitored by Hall signal and by an external magnetic field. The spin transistor exhibits nonlinear drain-source currents, with multilevel controlled states generated by the magnetization of the source. Varying the source magnetization enables a six-level readout for the two-terminal device. The simplicity of the device paves the way for its technological application in organic electronics and bioelectronics.

引用

页码：8657 / 8663

页数：7

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