CdSe nanocrystal quantum-dot memory

被引：91

作者：

Fischbein, MD ^{[1
]}

Drndic, M ^{[1
]}

机构：

[1] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1923189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Memory effects in the electronic transport in CdSe nanocrystal sNCd quantum-dot arrays have been observed and characterized. Conduction through a NC array can be reduced with a negative voltage and then restored with a positive voltage. Light can also be used to restore or even increase the NC array conduction. We have studied the switching of the conduction in CdSe NC arrays and found the behavior to be highly sensitive to the value and duration of the laser and voltage pulses. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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