Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

被引：29
作者：
Liu, Po-Tsun [1 ]
Chang, Chih-Hsiang
Chang, Chih-Jui
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 26期
基金：
中国国家自然科学基金;
关键词：
SHAPE-MEMORY ALLOY; ROOM-TEMPERATURE; TRANSFORMATION; DEFORMATION; DIFFRACTION; EVOLUTION; STRAIN;
D O I：
10.1063/1.4954978
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO2 backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS. Published by AIP Publishing.
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页数：9
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