Origin and FEM-assisted evaluation of residual stress in thermally oxidized porous silicon

被引：2
|
作者：
Tóth, G [1 ]
Kordás, K [1 ]
Pap, AE [1 ]
Vähäkangas, J [1 ]
Uusimäki, A [1 ]
Leppävuori, S [1 ]
机构：
[1] Univ Oulu, EMPART Res Grp Infotech Oulu, Microelect & Mat Phys Labs, FIN-90570 Oulu, Finland
来源：
COMPUTATIONAL MATERIALS SCIENCE | 2005年 / 34卷 / 02期
基金：
芬兰科学院;
关键词：
residual strain; finite element method; thermal oxidation; porous silicon;
D O I：
10.1016/j.commatsci.2004.12.071
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The origin of residual strain is investigated in thermally oxidized porous silicon structures by computer supported finite element modeling. Based on theoretical approaches, unit cell series were developed to simulate the porous matter and its oxidation process. It is found that the residual strain is caused by both thermal and intrinsic stress components. The results show strain values between 1.69 x 10(-3) and 2.26 x 10(-3) according to the different oxidation extent, which is in good agreement with the experimental strain data obtained by XRD. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：123 / 128
页数：6
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