Local amorphization in boron carbide at finite temperature: Strategies toward improved ductility

被引:13
作者
Li, Jun [1 ]
An, Qi [2 ]
Liu, Lisheng [1 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[2] Univ Nevada, Dept Chem & Mat Engn, Reno, NV 89557 USA
关键词
TOTAL-ENERGY CALCULATIONS; ELECTRON LOCALIZATION; CRYSTAL; B4C; SUBOXIDE; DAMAGE; B12P2;
D O I
10.1103/PhysRevB.104.134105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Boron carbide (B4C) is superhard, but its engineering applications are limited by the abnormal brittle failure arising from amorphous shear band formation. Mitigating the local amorphization is essential to improve the ductility of B4C. Here, we carried out ab initio molecular dynamics (AIMD) simulations to examine the response of B4C to shear along two plausible slip systems (001)/[100] and (111)/[11 (2) over bar] at finite temperature. We found that the icosahedra of B4C gradually deconstruct at finite temperature, resulting in local amorphization, thereby giving rise to a lower stress barrier than that of density functional theory simulations at zero temperature. The deconstruction of the icosahedral clusters arises from the interaction with the neighboring chains. The failure mechanism at the finite temperature suggested that the local amorphization can be suppressed by altering the structure of the 12-atom icosahedron and the 3-atom chain of B4C. To demonstrate this, we replaced the B11CP icosahedron in B4C with B-12 icosahedron to form boron-rich boron carbide (B13C2) and then performed the same shear deformations. We found that local amorphization significantly decreases, which results from the modified icosahedral interaction. We also altered the 3-atom C-B-C chain to the 2-atom P-P chain and found that the accumulated shear stress can be released through icosahedral slipping, which is achieved by breaking the chains. The icosahedral slipping then prevents the destruction of icosahedra under shear deformations, expected to improve the ductility. Our results demonstrate two design strategies toward improved ductility of B4C: (1) boron enrichment can alleviate amorphous shear band formation in boron carbide, and (2) altering the 3-atom chain to a 2-atom chain and meanwhile decreasing the strength of the chain to make it less stable than the icosahedron cage may lead to an icosahedral-slipping-dominated mechanism, thereby avoiding icosahedral fracture.
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页数:13
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共 62 条
[1]   Synthesis, Crystal Structure, and Properties of MgxB50C8 or Mgx(B12)4(CBC)2(C2)2 (x=2.4-4) [J].
Adasch, Volker ;
Schroeder, Melanie ;
Kotzott, Dominik ;
Ludwig, Thilo ;
Vojteer, Natascha ;
Hillebrecht, Harald .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2010, 132 (39) :13723-13732
[2]   Ductility in Crystalline Boron Subphosphide (B12P2) for Large Strain Indentation [J].
An, Qi ;
Goddard, William A., III .
JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 121 (30) :16644-16649
[3]   Improved Ductility of B12 Icosahedra-based Superhard Materials through Icosahedral Slip [J].
An, Qi ;
Goddard, William A., III .
JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 121 (21) :11831-11838
[4]   Nanotwins soften boron-rich boron carbide (B13C2) [J].
An, Qi ;
Goddard, William A., III .
APPLIED PHYSICS LETTERS, 2017, 110 (11)
[5]   Nanotwinned Boron Suboxide (B6O): New Ground State of B6O [J].
An, Qi ;
Reddy, K. Madhav ;
Dong, Huafeng ;
Chen, Ming-Wei ;
Oganov, Artem R. ;
Goddard, William A., III .
NANO LETTERS, 2016, 16 (07) :4236-4242
[6]   Atomistic Origin of Brittle Failure of Boron Carbide from Large-Scale Reactive Dynamics Simulations: Suggestions toward Improved Ductility [J].
An, Qi ;
Goddard, William A., III .
PHYSICAL REVIEW LETTERS, 2015, 115 (10)
[7]   Boron Suboxide and Boron Subphosphide Crystals: Hard Ceramics That Shear without Brittle Failure [J].
An, Qi ;
Goddard, William A., III .
CHEMISTRY OF MATERIALS, 2015, 27 (08) :2855-2860
[8]   Microalloying Boron Carbide with Silicon to Achieve Dramatically Improved Ductility [J].
An, Qi ;
Goddard, William A., III .
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2014, 5 (23) :4169-4174
[9]   Atomistic Explanation of Shear-Induced Amorphous Band Formation in Boron Carbide [J].
An, Qi ;
Goddard, William A., III ;
Cheng, Tao .
PHYSICAL REVIEW LETTERS, 2014, 113 (09)
[10]   Isotope dependencies of Raman spectra of B12As2, B12P2, B12O2, and B12+xC3-x: Bonding of intericosahedral chains [J].
Aselage, TL ;
Tallant, DR ;
Emin, D .
PHYSICAL REVIEW B, 1997, 56 (06) :3122-3129