Origin of the Accumulation Layer at the InN/a-In2O3 Interface

被引：8

作者：

Aliano, Antonio ^{[1
]}

Cicero, Giancarlo ^{[1
,2
]}

Catellani, Alessandra ^{[2
,3
]}

机构：

[1] Politecn Torino, Dept Appl Sci & Technol, I-10129 Turin, Italy

[2] CNR IMEM, I-43010 Parma, Italy

[3] CNR NANO, Ist Nanosci, Ctr S3, I-41125 Modena, Italy

来源：

ACS APPLIED MATERIALS & INTERFACES | 2015年 / 7卷 / 09期

关键词：

DFT; Interface; native oxide; heterostructure; InN; INDIUM OXIDE; SURFACE; HETEROSTRUCTURES; SPECTROSCOPY; OXIDATION;

D O I：

10.1021/am508944s

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We perform first-principles Density Functional Theory calculations for the amorphous In2O3/InN (11 (_)00) heterostructure. Our results suggest that the interface between InN and its native amorphous oxide is a type "I" interface as observed in X-ray photoemission spectroscopy data for the same materials in the crystalline form. The microscopic analysis of the system reveals the presence of peculiar structural features localized at the interface, such as the formation of N-O bonds and the existence of N dangling bonds, that are responsible for donor states. These findings shed light on the origin of the electron accumulation layer occurring at the interface in spontaneously oxidized InN nanowires, recently associated with the observed increase in conductivity for such systems.

引用

页码：5415 / 5419

页数：5

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