The search for an ideal absorber layer in thin-film solar cells seems to be a never-ending task. Apart from the solar absorber characteristics, antimony chalcogenide materials are gaining research interest predominantly due to their ribbon orientation and bandgap tunability in the entire solar spectrum. However, the challenges with open-circuit voltage deficit and low fill factor of solar cell devices remain unresolved. The reported highest power conversion efficiency with antimony chalcogenide absorber stays at 10.7%, where the absorber is made using a solution based hydrothermal synthesis method. In this mini-review, the latest developments related to solution -derived antimony chalcogenide absorber-based solar cells and the different strategies employed for improve-ments are presented in detail. With emphasis on the recent developments in the hydrothermal deposition of antimony chalcogenide absorber layer, the opportunities available to further enhance its properties through bandgap engineering and controlling the crystal orientation are discussed.
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City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Hong Kong 999077, Peoples R China
City Univ Hong Kong, Hong Kong Inst Clean Energy, Kowloon Tong, Hong Kong 999077, Peoples R ChinaCity Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Hong Kong 999077, Peoples R China
Li, Fengzhu
Jen, Alex K-Y
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City Univ Hong Kong, Hong Kong Inst Clean Energy, Kowloon Tong, Hong Kong 999077, Peoples R China
City Univ Hong Kong, Dept Chem, Kowloon, Hong Kong 999077, Peoples R China
Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USACity Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Hong Kong 999077, Peoples R China
机构:
South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
Xue, Hao
Wu, Rongfang
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South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
Wu, Rongfang
Xie, Ya
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South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
Xie, Ya
Tan, Qiongxuan
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South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
Tan, Qiongxuan
Qin, Donghuan
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South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
Qin, Donghuan
Wu, Hongbin
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South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
Wu, Hongbin
Huang, Wenbo
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South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
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Ulsan Natl Inst Sci & Technol UNIST, Dept Mat Sci & Engn, Ulsan 44919, South KoreaUlsan Natl Inst Sci & Technol UNIST, Dept Mat Sci & Engn, Ulsan 44919, South Korea
Heo, Seung Hwae
Shin, Hosun
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Korea Res Inst Stand & Sci KRISS, Smart Devices Team, Daejeon 34113, South KoreaUlsan Natl Inst Sci & Technol UNIST, Dept Mat Sci & Engn, Ulsan 44919, South Korea
Shin, Hosun
Son, Jae Sung
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Ulsan Natl Inst Sci & Technol UNIST, Dept Mat Sci & Engn, Ulsan 44919, South Korea
Ulsan Natl Inst Sci & Technol UNIST, Grad Sch Semicond Mat & Devices, Ulsan 44919, South KoreaUlsan Natl Inst Sci & Technol UNIST, Dept Mat Sci & Engn, Ulsan 44919, South Korea
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SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Green Energy Mat Lab, Kattankulathur 603203, Tamil Nadu, IndiaSRM Inst Sci & Technol, Dept Phys & Nanotechnol, Green Energy Mat Lab, Kattankulathur 603203, Tamil Nadu, India
Madhavanunni Rekha, Sreelakshmi
Vadakke Neelamana, Hariprasad
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SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Green Energy Mat Lab, Kattankulathur 603203, Tamil Nadu, IndiaSRM Inst Sci & Technol, Dept Phys & Nanotechnol, Green Energy Mat Lab, Kattankulathur 603203, Tamil Nadu, India
Vadakke Neelamana, Hariprasad
Bhat, S. Venkataprasad
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SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Green Energy Mat Lab, Kattankulathur 603203, Tamil Nadu, IndiaSRM Inst Sci & Technol, Dept Phys & Nanotechnol, Green Energy Mat Lab, Kattankulathur 603203, Tamil Nadu, India