Laser Produced Plasma Light Source for EUVL

被引：15
|
作者：
Fomenkov, Igor V. [1 ]
Ershov, Alex I. [1 ]
Partlo, William N. [1 ]
Myers, David W. [1 ]
Sandstrom, Richard L. [1 ]
Boewering, Norbert R. [1 ]
Vaschenko, Georgiy O. [1 ]
Khodykin, Oleh V. [1 ]
Bykanov, Alexander N. [1 ]
Srivastava, Shailendra N. [1 ]
Ahmad, Imtiaz [1 ]
Rajyaguru, Chirag [1 ]
Golich, Daniel J. [1 ]
De Dea, Silvia [1 ]
Hou, Richard R. [1 ]
O'Brien, Kevin M. [1 ]
Dunstan, Wayne J. [1 ]
Brandt, David C. [1 ]
机构：
[1] Cymer Inc, San Diego, CA 92127 USA
来源：
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY | 2010年 / 7636卷
关键词：
EUV source; EUV lithography; Laser Produced Plasma;
D O I：
10.1117/12.848408
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
This paper describes the development of laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source architecture for advanced lithography applications in high volume manufacturing. EUV lithography is expected to succeed 193nm immersion technology for sub-22nm critical layer patterning. In this paper we discuss the most recent results from high EUV power testing and debris mitigation testing on witness samples and normal incidence collectors. Subsystem performance will be shown including the CO2 drive laser, debris mitigation, normal incidence collector and coatings, droplet generation, laser-to-droplet targeting control, intermediate-focus (IF) metrology and system use and experience. In addition, a number of smaller lab-scale experimental systems have also been constructed and tested. This presentation reviews the experimental results obtained on systems with a focus on the topics most critical for an HVM source.
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页数：6
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