Surface passivation of InGaAs/InP heterostructures using UV-irradiation and ozone

被引：11

作者：

Driad, R ^{[1
]}

Lu, ZH ^{[1
]}

Laframboise, S ^{[1
]}

Scansen, D ^{[1
]}

McKinnon, WR ^{[1
]}

McAlister, SP ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712523

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of dielectric films (SiO2, Si3N4), chemical treatments and UV-ozone on InP and InGaAs surfaces have been investigated. We shown that an additional UV-ozone sequence, before PECVD (plasma enhanced chemical vapor deposition) dielectric deposition, is essential to prevent the typical degradation of electrical characteristics observed in InGaAs/InP heterostructure bipolar transistors (HBTs). Compared with untreated HBTs, the UV-ozone treated devices show good improvement of the low frequency noise and HBT current gain at low currents.

引用

页码：459 / 462

页数：4