Thermal Loading and Analysis of Modular Multilevel Converters using Injection Control of Circulating Current and Common-mode Voltage
被引:0
作者:
Ronanki, Deepak
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机构:
Univ Ontario Inst Technol, Fac Engn & Appl Sci, Dept Elect Comp & Software Engn, STEER Grp,Elect Mobil & Transportat Innovat E MOT, Oshawa, ON L1G 0C5, CanadaUniv Ontario Inst Technol, Fac Engn & Appl Sci, Dept Elect Comp & Software Engn, STEER Grp,Elect Mobil & Transportat Innovat E MOT, Oshawa, ON L1G 0C5, Canada
Ronanki, Deepak
[1
]
Williamson, Sheldon S.
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机构:
Univ Ontario Inst Technol, Fac Engn & Appl Sci, Dept Elect Comp & Software Engn, STEER Grp,Elect Mobil & Transportat Innovat E MOT, Oshawa, ON L1G 0C5, CanadaUniv Ontario Inst Technol, Fac Engn & Appl Sci, Dept Elect Comp & Software Engn, STEER Grp,Elect Mobil & Transportat Innovat E MOT, Oshawa, ON L1G 0C5, Canada
Williamson, Sheldon S.
[1
]
机构:
[1] Univ Ontario Inst Technol, Fac Engn & Appl Sci, Dept Elect Comp & Software Engn, STEER Grp,Elect Mobil & Transportat Innovat E MOT, Oshawa, ON L1G 0C5, Canada
来源:
2019 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)
|
2019年
基金:
加拿大自然科学与工程研究理事会;
关键词:
Circulating current;
energy efficiency;
modular multilevel converters;
pulse width modulation;
reliability;
CURRENT SUPPRESSION;
RELIABILITY;
D O I:
10.1109/ecce.2019.8912820
中图分类号:
TE [石油、天然气工业];
TK [能源与动力工程];
学科分类号:
0807 ;
0820 ;
摘要:
The circulating current (CC) is an undesirable phenomenon in a modular multilevel converter (MMC), as it increases the capacitor voltage ripple, power losses and current stress on power semiconductor devices. Prior research has mainly focused on various control methods as well as modulation schemes to minimize the CC. This paper presents a comprehensive analysis of an MMC under common-mode voltage (CMV) injection and CC control strategies in terms of thermal loading and failure rate of power semiconductor devices. To benchmark these control strategies, a generalized control structure for the MMC is presented. To study the thermal loading on power semiconductor devices, an electro-thermal model is developed. The effectiveness of the presented control approach is demonstrated through detailed simulations and experimental studies using hardware-in-the-loop (HIL) system. Finally, the loading on power semiconductor devices of the MMC is evaluated under injection control of CC and CMV for different modulation schemes.
机构:
ABB Corp Res, S-72178 Vasteras, Sweden
KTH Royal Inst Technol, Sch Elect Engn EES, Lab Elect Energy Convers E2C, S-10044 Stockholm, SwedenABB Corp Res, S-72178 Vasteras, Sweden
Antonopoulos, Antonios
Angquist, Lennart
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机构:
KTH Royal Inst Technol, Sch Elect Engn EES, Lab Elect Energy Convers E2C, S-10044 Stockholm, SwedenABB Corp Res, S-72178 Vasteras, Sweden
Angquist, Lennart
Norrga, Staffan
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机构:
KTH Royal Inst Technol, Sch Elect Engn EES, Lab Elect Energy Convers E2C, S-10044 Stockholm, SwedenABB Corp Res, S-72178 Vasteras, Sweden
Norrga, Staffan
Ilves, Kalle
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机构:
KTH Royal Inst Technol, Sch Elect Engn EES, Lab Elect Energy Convers E2C, S-10044 Stockholm, SwedenABB Corp Res, S-72178 Vasteras, Sweden
Ilves, Kalle
Harnefors, Lennart
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机构:
ABB Corp Res, S-72178 Vasteras, Sweden
KTH Royal Inst Technol, Sch Elect Engn EES, Lab Elect Energy Convers E2C, S-10044 Stockholm, SwedenABB Corp Res, S-72178 Vasteras, Sweden
Harnefors, Lennart
Nee, Hans-Peter
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h-index: 0
机构:
KTH Royal Inst Technol, Sch Elect Engn EES, Lab Elect Energy Convers E2C, S-10044 Stockholm, SwedenABB Corp Res, S-72178 Vasteras, Sweden
机构:
Rockwell Automat, Medium Voltage Res & Dev Dept, Cambridge, ON N1R 5X1, CanadaRyerson Univ, Dept Elect Comp & Biomed Engn, Toronto, ON M5B 2K3, Canada
机构:
ABB Corp Res, S-72178 Vasteras, Sweden
KTH Royal Inst Technol, Sch Elect Engn EES, Lab Elect Energy Convers E2C, S-10044 Stockholm, SwedenABB Corp Res, S-72178 Vasteras, Sweden
Antonopoulos, Antonios
Angquist, Lennart
论文数: 0引用数: 0
h-index: 0
机构:
KTH Royal Inst Technol, Sch Elect Engn EES, Lab Elect Energy Convers E2C, S-10044 Stockholm, SwedenABB Corp Res, S-72178 Vasteras, Sweden
Angquist, Lennart
Norrga, Staffan
论文数: 0引用数: 0
h-index: 0
机构:
KTH Royal Inst Technol, Sch Elect Engn EES, Lab Elect Energy Convers E2C, S-10044 Stockholm, SwedenABB Corp Res, S-72178 Vasteras, Sweden
Norrga, Staffan
Ilves, Kalle
论文数: 0引用数: 0
h-index: 0
机构:
KTH Royal Inst Technol, Sch Elect Engn EES, Lab Elect Energy Convers E2C, S-10044 Stockholm, SwedenABB Corp Res, S-72178 Vasteras, Sweden
Ilves, Kalle
Harnefors, Lennart
论文数: 0引用数: 0
h-index: 0
机构:
ABB Corp Res, S-72178 Vasteras, Sweden
KTH Royal Inst Technol, Sch Elect Engn EES, Lab Elect Energy Convers E2C, S-10044 Stockholm, SwedenABB Corp Res, S-72178 Vasteras, Sweden
Harnefors, Lennart
Nee, Hans-Peter
论文数: 0引用数: 0
h-index: 0
机构:
KTH Royal Inst Technol, Sch Elect Engn EES, Lab Elect Energy Convers E2C, S-10044 Stockholm, SwedenABB Corp Res, S-72178 Vasteras, Sweden
机构:
Rockwell Automat, Medium Voltage Res & Dev Dept, Cambridge, ON N1R 5X1, CanadaRyerson Univ, Dept Elect Comp & Biomed Engn, Toronto, ON M5B 2K3, Canada