Structural design of laminated B4C/TiC composite fabricated by reactive melt infiltration

被引:11
|
作者
Sun, Mengyong [1 ]
Bai, Yuhang [1 ]
Li, Mingxing [1 ]
Fan, Shangwu [1 ]
Cheng, Laifei [1 ]
机构
[1] Northwestern Polytech Univ, Sci & Technol Thermostruct Composite Mat Lab, Xian 710072, Shaanxi, Peoples R China
基金
国家重点研发计划;
关键词
Structural design; Laminated ceramics; In-suit formation; Boron carbide-aluminum; CARBIDE-ALUMINUM COMPOSITES; BORON-CARBIDE; SILICON-CARBIDE; CERAMICS; TI3SIC2; FRACTURE; PREFORMS; POWDER; ALLOY;
D O I
10.1016/j.jallcom.2018.06.271
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Laminated boron carbide/titanium carbide (B4C/TiC) ceramic with multilayer structural unit was fabricated by reactive melt infiltration (RMI) process with silicon (Si) and aluminum silicon (Al40Si60) alloy. Laminated B4C/TiC ceramics infiltrated at a low temperature of 1300 degrees C with Al40Si60 alloy acquired structural unit including two layers of Al3B48C2-SiC, one layer of TiC-Ti3Si(Al)C-2, and two layers of in-situ synthesized TiB2 at the interface between Al(3)B(48)C(2 )and TiC layers. The thickness of Al3B48C2-SiC layer, TiB2-SiC layer, and TiC-Ti3Si(Al)C-2-SiC layer was found to be about 450, 30, and 90 mu m, respectively. Reaction products of Al and B4C consisted of two types of Al-B-C ternary phases including Al3B48C2 and AlB24C4 attributed to the solution of Al in B4C and diffusion of Al into B4C. The diffusion of elements caused by concentration gradient and different diffusion rate of Si led to the formation of TiSi2 layer at 1550 degrees C and TiB2 layer at 1300 degrees C between B4C and TiC layers. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:913 / 920
页数:8
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