Structural, optoelectronic and thermodynamic characteristic of orthorhombic SnZrCH3(CH=S, Se) compounds: Insights from DFT computations

被引:2
|
作者
Ben Bellil, N.
Litimein, F. [1 ]
Khachai, H. [1 ]
Khenata, R. [2 ]
Abdiche, A. [2 ,3 ]
Guler, E. [4 ]
Ahmed, R. [5 ,6 ]
Bouhemadou, A. [7 ]
Bin Omran, S. [8 ]
Khalifeh, Jamil M. [9 ]
机构
[1] Univ DjillaliLiab Sidi Bel, Lab Study Mat & Instruments Optic LEMIO, Sidi Bel Abbes, Algeria
[2] Univ Mascara, Lab Phys Quant & Modelisat Math, Mascara, Algeria
[3] Univ IbnKhaldoun, Dept Elect Engn, Tiaret, Algeria
[4] AnkaraHaciBayramVeli Univ, Dept Phys, TR-06900 Ankara, Turkey
[5] Univ Punjab, Ctr High Energy Phys, Quaid Azam Campus, Lahore 54590, Pakistan
[6] Univ Teknol Malaysia, Dept Phys, Fac Sci, Johor Baharu 81310, Malaysia
[7] Univ Setif 1, Lab Developing New Mat & Characterizat, Setif, Algeria
[8] King Saud Univ, Coll Sci, Dept Phys & Astron, POB 2455, Riyadh 11451, Saudi Arabia
[9] Univ Jordan, Dept Phys, Amman 11942, Jordan
来源
MATERIALS TODAY COMMUNICATIONS | 2021年 / 27卷
关键词
DFT; FP-LAPW; SnZrS3; SnZrSe3; Optoelectronic properties; Thermodynamic properties; CHALCOGENIDE PEROVSKITES; SOLIDS;
D O I
10.1016/j.mtcomm.2021.102427
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this research work, a study on the structural, optoelectronic, and thermodynamics properties of the SnZrCH3 (CH = S, Se) compounds is presented. The study is performed by the "full potential linearized augmented plane wave plus local orbitals (FP-(LAPW + lo)) method framed within density functional theory (DFT). To treat with exchange-correlation energy/potential, different approximations; local density approximation (LDA), generalized approximation (GGA) by Wu and Cohen (WC) named as (WC-GGA) are used toestimate structural properties such as lattice constants, bulk moduli,and related results of pressure derivative. Besides that Engel Vosko's approach of GGA named as (EV-GGA) and Becke-Johnson modified form of exchange-correlation potential (mBJ-GGA) is also used to obtain reliable results of the electronic and optical properties. Our calculations of electronic band structures and density of states endorse both compounds of indirect bandgapnature withbandgap energy 1.054 eV and 0.531 eV for SnZrS3 and SnZrSe3, respectively at the level of mBJ-GGA. Our calculations of the optical absorption parameters show the highest values of absorption coefficients in the ultraviolet (UV) region, attributed to localized Zirconium states lying in the lower region of the conduction band. Hence, our findings show that both SnZrS3 and SnZrSe3 compounds are potential candidates for photovoltaic applications. Moreover, the pressure effects on the lattice constants, heat capacities, thermal expansion coefficients, entropy, and Debye temperature are also explored using the quasi-harmonic Debye model.
引用
收藏
页数:11
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