Characterization and Failure Analysis of Wafer Bonded Devices and unfilled Through-Silicon-Vias (TSVs)

被引:2
作者
Cassidy, C. [1 ]
Kraft, J. [1 ]
Koppitsch, G. [1 ]
Brandlhofer, E. [1 ]
Steiner, M. [1 ]
Schrank, F. [1 ]
Erwin, D. [2 ]
Raz-Moyal, E. [2 ]
机构
[1] Austriamicrosystems AG, Graz, Austria
[2] Gatan Inc, Pleasanton, CA USA
来源
ISTFA 2008: CONFERENCE PROCEEDINGS FROM THE 34TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2008年
关键词
D O I
10.1361/cp2008istfa368
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This paper is concerned with characterization and failure analysis challenges posed by 3D integration of semiconductor devices, with a particular focus on wafer bonded components and Through Silicon Vias (TSV). Requirements for sample preparation are discussed, along with advantages and limitations exhibited by various different techniques. Analysis examples with real devices are presented, along with successful sample preparation solutions enabled by a precision polishing toolset.
引用
收藏
页码:368 / +
页数:2
相关论文
共 6 条
[1]   A CMOS-compatible process for fabricating electrical through-vias in silicon [J].
Andry, P. S. ;
Tsang, C. ;
Sprogis, E. ;
Patel, C. ;
Wright, S. L. ;
Webb, B. C. ;
Buchwalter, L. P. ;
Manzer, D. ;
Horton, R. ;
Polastre, R. ;
Knickerbocker, J. .
56TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE 2006, VOL 1 AND 2, PROCEEDINGS, 2006, :831-+
[2]   Advanced processing techniques for through-wafer interconnects [J].
Burkett, SL ;
Qiao, X ;
Temple, D ;
Stoner, B ;
McGuire, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01) :248-256
[3]  
*ITRS, ITRS 2007 WINT C PRE
[4]   Passivation integrity investigations for through wafer interconnects [J].
Kraft, J. ;
Hueber, A. ;
Carniello, S. ;
Schrank, F. ;
Wachmann, E. .
2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, :506-509
[5]  
Laermer F., 1996, Patent, Patent No. [5,501,893, 5501893]
[6]  
*SEM INT, 2008, SPEC REP 3D INT