Synthesis of GaN nanowires on gold-coated SiC substrates by novel pulsed electron deposition technique

被引:30
作者
Lei, M. [1 ,2 ]
Yang, H. [2 ]
Li, P. G. [1 ]
Tang, W. H. [1 ]
机构
[1] Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Devices, Dept Phys, Hangzhou 310018, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 10080, Peoples R China
基金
中国国家自然科学基金;
关键词
GaN; nanowire; pulsed electron deposition technique; Raman scattering spectroscopy;
D O I
10.1016/j.apsusc.2007.08.004
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A two-step approach for macro-synthesis of GaN nanowires was developed in this study. GaN nanoparticles were firstly synthesized through a facile solid-state reaction using an organic reagent dicyandiamide (C2N4H4) and Ga2O3 as precursors. Subsequently, single-crystalline wurtzite GaN nanowires were grown on gold-coated 6H-SiC substrates via novel pulsed electron deposition (PED) technique using the as-prepared GaN nanoparticles as target, which provides a new route employing nanoparticles as precursors to fabricate GaN nanowires. It is found that pulsed electron ablation induced Ga and N plasma directly towards the gold-coated substrate to initialize the vapor-liquid-solid (VLS) growth processes. The morphological and structural properties were investigated in detail and Raman scattering spectrum of these nanowires presented some new features. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:1947 / 1952
页数:6
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