Studying the Recrystallization of Cu(InGa)Se2 Semiconductor Thin Films by Silver Bromide In-situ Treatment

被引：3

作者：

Poudel, Deewakar ^{[1
]}

Lepetit, Thomas ^{[2
]}

Belfore, Benjamin ^{[1
]}

Palmiotti, Elizabeth ^{[3
]}

Ashrafee, Tasnuva ^{[1
]}

Karki, Shankar ^{[1
]}

Rajan, Grace ^{[1
]}

Rockett, Angus ^{[3
]}

Barreau, Nicolas ^{[2
]}

Marsillac, Sylvain ^{[1
]}

机构：

[1] Old Dominion Univ, Virginia Inst Photovolta, Norfolk, VA 23529 USA

[2] Univ Nantes, Inst Mat Jean Rouxel, Nantes, France

[3] Colorado Sch Mines, Dept Met & Mat Engn, Golden, CO 80401 USA

来源：

2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2021年

关键词：

CIGS; recrystallization; AgBr; thin film; TIME SPECTROSCOPIC ELLIPSOMETRY; DEGRADATION MECHANISM; BUFFER LAYER; SOLAR-CELLS; CIGS; PERFORMANCE; BETA-IN2S3; DEPOSITION; GROWTH; IN2S3;

D O I：

10.1109/PVSC43889.2021.9518578

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cu(In,Ga)Se-2 samples were fabricated using a 3stage thermal co-evaporation process on molybdenum back contact at low temperature. The process of recrystallization was carried out in between the 2nd and 3rd stages by flashing 25 mg of AgBr for 2 minutes. A change in morphological structure was observed as small grains transformed into large grains, as confirmed by XRD and SEM measurements. The decrease of the Ga gradient, seen in the SIMS depth profile, suggests Ga interdiffusion due to AgBr treatment. Overall, the AgBr treatment contributes to a general improvement in device performance as compared to the as-deposited devices.

引用

页码：2307 / 2311

页数：5

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