Ultra low power GaAs MMIC low noise amplifier for smart antenna combining at 5.2 GHz

被引：13

作者：

Ellinger, F ^{[1
]}

Lott, U ^{[1
]}

Bächtold, W ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, ETH Zurich, Lab Electromagnet Fields & Microwave Elect, CH-8092 Zurich, Switzerland

来源：

2000 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2000年

关键词：

D O I：

10.1109/RFIC.2000.854438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A switchable GaAs MMIC cascode low noise amplifier for smart antenna combining at 5.2 GHz (HIPERLAN) is presented using a standard 0.6 mum MESFET process. A gain of 12.3 do and a noise figure of 2.4 dB are measured, drawing only 1.2 mA from a 1 V supply. A gain/P-dc figure of merit of 10 dB/mW is achieved, which to our knowledge is the highest ever reported at C-band.

引用

页码：157 / 159

页数：3