Demonstration of a novel tunnel FET with channel sandwiched by drain

被引：12

作者：

Bagga, Navjeet ^{[1
]}

Chauhan, Nitanshu ^{[1
,2
]}

Banchhor, Shashank ^{[1
]}

Gupta, Divyam ^{[1
]}

Dasgupta, S. ^{[1
]}

机构：

[1] Indian Inst Technol Roorkee, Dept Elect & Commun Engn, Roorkee 247667, Uttar Pradesh, India

[2] Natl Inst Technol Uttarakhand, Dept Elect Engn, Srinagar 246174, Uttarakhand, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2020年 / 35卷 / 01期

关键词：

tunnel field effect transistor; band to band tunneling; semiconductor devices; ambipolar current; drain doping; GATE; TRANSISTORS;

D O I：

10.1088/1361-6641/ab5434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel double gate tunnel FET with channel sandwiched by drain (CSD-TFET) is proposed and investigated in this paper. The proposed CSD-TFET consists of three differently doped drain layers in which the middle layer is an extension of the channel and is sandwiched by the heavily doped top and bottom drain layers. The objective of the proposed endeavor is to reduce the ambipolar current without affecting the ON current. We have compared the results of CSD-TFET with the reference tunnel FET (RTFET) designed by using the same simulation setup as opted for simulating the proposed CSD-TFET. The extracted ambipolar current of CSD-TFET is similar to 10(4) times lower than that of RTEFT with no change in the ON current. An interesting flipping/crossover phenomenon in the gate-to-drain capacitance (C-gd) of the proposed CSD-TFET at a certain gate-to-drain voltage (V-GD) is observed. We also discussed the saturation phenomenon of the drain current and the variation of unity gain frequency with C-gd.

引用

页数：7

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