Effect of MgO Barrier Insertion on Spin-Dependent Transport Properties of CoFe/n-GaAs Heterojunctions

被引：11

作者：

Akiho, Takafumi ^{[1
]}

Uemura, Tetsuya ^{[1
]}

Harada, Masanobu ^{[1
]}

Matsuda, Ken-ichi ^{[1
]}

Yamamoto, Masafumi ^{[1
]}

机构：

[1] Hokkaido Univ, Div Elect Informat, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 02期

关键词：

ROOM-TEMPERATURE; INJECTION; SILICON; METAL; FE;

D O I：

10.1143/JJAP.51.02BM01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of MgO barrier insertion on a spin-valve signal in a four-terminal non-local geometry and on tunneling anisotropic magnetoresistance (TAMR) characteristics in a three-terminal geometry was investigated in Co50Fe50/n-GaAs heterojunctions. Inserting a MgO barrier significantly enhanced the spin-valve signal amplitude by a factor of 38, and the sign of spin polarization was opposite that of a sample without a MgO barrier. The TAMR effect was suppressed in the case of a Co50Fe50/MgO/n-GaAs junction. This suppression of the TAMR effect can be explained by the suppression of Fermi-level pinning and the lowering of Schottky barrier height. (C) 2012 The Japan Society of Applied Physics

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页数：5

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