Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode

被引：3

作者：

Huang Jian-Hua ^{[1
]}

Lu Hong-Liang ^{[1
]}

Zhang Yu-Ming ^{[1
]}

Zhang Yi-Men ^{[1
]}

Tang Xiao-Yan ^{[1
]}

Chen Feng-Ping ^{[1
]}

Song Qing-Wen ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS B | 2011年 / 20卷 / 11期

基金：

中国国家自然科学基金;

关键词：

4H-SiC; merged PiN/Schottky diode; junction termination technology; breakdown voltage; EDGE TERMINATION; DESIGN;

D O I：

10.1088/1674-1056/20/11/118401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode ( MPS) is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage.

引用

页数：4

共 15 条

[1] ANALYSIS OF A HIGH-VOLTAGE MERGED P-I-N SCHOTTKY (MPS) RECTIFIER [J].