Tuning of Electrical and Magnetic Transport Properties in Bi2Se3 Topological Insulator Crystals Doped with Mn

被引:15
作者
Wei, Zhantao [1 ]
Lv, Li [1 ]
Zhang, Min [1 ]
Yang, Xinsheng [1 ]
Zhao, Yong [1 ,2 ]
机构
[1] Southwest Jiaotong Univ, Key Lab Adv Technol Mat, Superconductor & New Energy R&D Ctr SRDC, Minist Educ, Chengdu 610031, Peoples R China
[2] Univ New S Wales, Sch Mat & Engn, Superconduct Res Grp, Sydney, NSW 2052, Australia
基金
中国国家自然科学基金;
关键词
Topological insulator; Transport properties; Shubbiknov-de-Haas oscillations; Bi2Se3; GROWTH;
D O I
10.1007/s10948-015-2965-1
中图分类号
O59 [应用物理学];
学科分类号
摘要
Mn (x) Bi2-x Se-3 crystals were grown by self-flux method and the phase structure, electrical and magnetic transport properties, carrier density, and Hall mobility were studied. Conductivity was modified by Mn at different temperature regions with different mechanisms. Samples containing low concentration of Mn with x a parts per thousand currency sign 0.05 showed metal behavior. It became p-type semiconductor at x = 0.07, where the electrical resistivity abruptly increased and the carrier density suddenly dropped. The nonmetallic behavior may originate from the topological transport properties or the reduction of intrinsic defects. Doping Mn resulted in a paramagnetic behavior and the origin of magnetism may be also related to the exchange interaction between Mn ions. Furthermore, obvious Shubbiknov-de-Haas (SdH) oscillations were only found in sample with x = 0.07.
引用
收藏
页码:2083 / 2088
页数:6
相关论文
共 50 条
  • [41] Observation of chiral surface excitons in a topological insulator Bi2Se3
    Kung, H-H.
    Goyal, A. P.
    Maslov, D. L.
    Wang, X.
    Lee, A.
    Kemper, A. F.
    Cheong, S-W.
    Blumberg, G.
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2019, 116 (10) : 4006 - 4011
  • [42] Determination of the actual valence band of a topological insulator Bi2Se3
    Higuchi, Yuki
    Itaya, Ryota
    Saito, Harutaka
    Toichi, Yuichiro
    Kobayashi, Takahiro
    Tomita, Mito
    Terakawa, Shigemi
    Suzuki, Katsuhiro
    Kuroda, Kenta
    Kotani, Takao
    Matsui, Fumihiko
    Suga, Shigemasa
    Sato, Hitoshi
    Sato, Kazunori
    Sakamoto, Kazuyuki
    VACUUM, 2025, 233
  • [43] Electron spin resonance study of mixed Bi2Se3 topological insulator-magnetic insulator nanoparticles
    Lee, Kyu Won
    Lee, Yeo Jin
    Lee, Cheol Eui
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2023, 182
  • [44] Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3
    Glinka, Yuri D.
    Babakiray, Sercan
    Holcomb, Mikel B.
    Lederman, David
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (16)
  • [45] Bi-rich grow topological insulator Bi2Se3 nanodomains structures
    Jia, Guozhi
    Wang, Xionglong
    Li, Qiang
    Yao, Jianghong
    SUPERLATTICES AND MICROSTRUCTURES, 2014, 66 : 33 - 38
  • [46] Observation of nano-scaled defects in Fe doped Bi2Se3 topological insulator crystal
    Lv, Li
    Zhou, Dajin
    Zhang, Min
    Yang, Liqin
    Yang, Xinsheng
    Zhao, Yong
    MATERIALS LETTERS, 2013, 99 : 118 - 121
  • [47] Electronic structure and x-ray magnetic circular dichroism in cr-doped topological insulator bi2se3
    Antonov, V. N.
    Bekenov, L. V.
    Ernst, A.
    LOW TEMPERATURE PHYSICS, 2023, 49 (01) : 120 - 129
  • [48] Tuning the Fermi level in Bi2Se3 bulk materials and transport devices
    Wang, Zhi-yong
    Wei, Peng
    Shi, Jing
    FRONTIERS OF PHYSICS, 2012, 7 (02) : 160 - 164
  • [49] Magnetic and magnetotransport properties of Bi2Se3 thin films doped by Eu
    Aronzon, B. A.
    Oveshnikov, L. N.
    Prudkoglyad, V. A.
    Selivanov, Yu. G.
    Chizhevskii, E. G.
    Kugel, K. I.
    Karateev, I. A.
    Vasiliev, A. L.
    Lahderanta, E.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2018, 459 : 331 - 334
  • [50] Temperature dependence of nanoscale friction on topological insulator Bi2Se3 surfaces
    Wang, Wen
    Lei, Haocheng
    Wang, Ashu
    NANOTECHNOLOGY, 2022, 33 (39)