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Tuning of Electrical and Magnetic Transport Properties in Bi2Se3 Topological Insulator Crystals Doped with Mn
被引:15
作者:
Wei, Zhantao
[1
]
Lv, Li
[1
]
Zhang, Min
[1
]
Yang, Xinsheng
[1
]
Zhao, Yong
[1
,2
]
机构:
[1] Southwest Jiaotong Univ, Key Lab Adv Technol Mat, Superconductor & New Energy R&D Ctr SRDC, Minist Educ, Chengdu 610031, Peoples R China
[2] Univ New S Wales, Sch Mat & Engn, Superconduct Res Grp, Sydney, NSW 2052, Australia
基金:
中国国家自然科学基金;
关键词:
Topological insulator;
Transport properties;
Shubbiknov-de-Haas oscillations;
Bi2Se3;
GROWTH;
D O I:
10.1007/s10948-015-2965-1
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Mn (x) Bi2-x Se-3 crystals were grown by self-flux method and the phase structure, electrical and magnetic transport properties, carrier density, and Hall mobility were studied. Conductivity was modified by Mn at different temperature regions with different mechanisms. Samples containing low concentration of Mn with x a parts per thousand currency sign 0.05 showed metal behavior. It became p-type semiconductor at x = 0.07, where the electrical resistivity abruptly increased and the carrier density suddenly dropped. The nonmetallic behavior may originate from the topological transport properties or the reduction of intrinsic defects. Doping Mn resulted in a paramagnetic behavior and the origin of magnetism may be also related to the exchange interaction between Mn ions. Furthermore, obvious Shubbiknov-de-Haas (SdH) oscillations were only found in sample with x = 0.07.
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页码:2083 / 2088
页数:6
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