Prospects for gallium nitride based electronic devices

被引：0
|
作者：
Zolper, JC [1 ]
机构：
[1] Off Naval Res, Arlington, VA 22217 USA
来源：
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷
关键词：
gallium nitride; AlGaN; HEMTs; HBTs; power amplifiers; low noise amplifiers;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN, along with the other binary Nitrides (InN and AIN), represent a class of wide bandgap semiconductors that can be used to realized several electronic devices that are now, or will soon, outperform the GaAs or InP counterpart. AlGaN/GaN High Electron Mobility Transistors (HEMTs) are the most promising for microwave power generation. In addition, AlGaN HEMTs are now competitive for low noise receiver amplifiers. In addition, GaN-based HBTs and microwave limiters also show great promise.
引用
收藏
页码：997 / 1002
页数：6
相关论文
共 50 条
  • [21] GALLIUM DEMAND FOR ELECTRONIC DEVICES
    SCHOENUNG, JM
    CLARK, JP
    JOURNAL OF METALS, 1987, 39 (06): : 36 - 38
  • [22] Tunable gallium nitride-based devices for ultrafast signal processing
    Xie, Peng
    Wen, Yu
    Yang, Wenqiang
    Wan, Zishen
    Liu, Jiarui
    Wang, Xinyu
    Da, Siqi
    Wang, Yishan
    MODERN PHYSICS LETTERS B, 2019, 33 (17):
  • [23] Gallium-nitride-based materials for blue to ultraviolet optoelectronics devices
    Denbaars, SP
    PROCEEDINGS OF THE IEEE, 1997, 85 (11) : 1740 - 1749
  • [24] Electronic devices based on quantum wires: Prospects and problems
    Obukhov, IA
    PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEW AND SHORT NOTES TO NANOMEETING '97, 1997, : 322 - 325
  • [25] Gallium Nitride Materials and Devices VIII Introduction
    Chyi, Jen-Inn
    Fujioka, Hiroshi
    Morkoc, Hadis
    Nanishi, Yasushi
    Piprek, Joachim
    Yoon, Euijoon
    GALLIUM NITRIDE MATERIALS AND DEVICES VIII, 2013, 8625
  • [26] Gate dielectrics improve gallium nitride devices
    Varnava, Christiana
    NATURE ELECTRONICS, 2020, 3 (01) : 15 - 15
  • [27] Gallium nitride nanowire devices and photoelectric properties
    Teker, Kasif
    SENSORS AND ACTUATORS A-PHYSICAL, 2014, 216 : 142 - 146
  • [28] Gallium Nitride and Silicon Carbide Power Devices
    Shea, John J.
    IEEE ELECTRICAL INSULATION MAGAZINE, 2017, 33 (04) : 72 - 72
  • [29] GALLIUM NITRIDE EMITTING DEVICES PREPARATION AND PROPERTIES
    JACOB, G
    BOULOU, M
    FURTADO, M
    BOIS, D
    JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (04) : 499 - 514
  • [30] Gate dielectrics improve gallium nitride devices
    Christiana Varnava
    Nature Electronics, 2020, 3 : 15 - 15
12345