Prospects for gallium nitride based electronic devices

被引：0
|
作者：
Zolper, JC [1 ]
机构：
[1] Off Naval Res, Arlington, VA 22217 USA
来源：
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷
关键词：
gallium nitride; AlGaN; HEMTs; HBTs; power amplifiers; low noise amplifiers;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN, along with the other binary Nitrides (InN and AIN), represent a class of wide bandgap semiconductors that can be used to realized several electronic devices that are now, or will soon, outperform the GaAs or InP counterpart. AlGaN/GaN High Electron Mobility Transistors (HEMTs) are the most promising for microwave power generation. In addition, AlGaN HEMTs are now competitive for low noise receiver amplifiers. In addition, GaN-based HBTs and microwave limiters also show great promise.
引用
收藏
页码：997 / 1002
页数：6
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