40 GHz Phase Shifter based on Semiconductor Laser

被引：4

作者：

Peng, P. C. ^{[1
]}

Wu, F. M. ^{[1
]}

Lin, C. T. ^{[2
]}

Chen, J. H. ^{[2
]}

Kao, W. C. ^{[2
]}

Shih, P. T. ^{[2
]}

Jiang, W. J. ^{[2
]}

Kuo, H. C. ^{[2
]}

Chi, S. ^{[3
]}

机构：

[1] Natl Chi Nan Univ, Dept Appl Mat & Optoelect Engn, Puli, Nantou County, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

[3] Yuan Ze Univ, Dept Elect Engn, Chungli, Taiwan

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 08期

关键词：

D O I：

10.1049/el:20080457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This investigation experimentally demonstrates a 40 GHz phase shifter based on a semiconductor laser. The phase shift is achieved by adjusting the bias current and wavelength detuning. The device has an optical delay of 23 ps and a phase shift of about 331 degrees.

引用

页码：520 / 521

页数：2

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